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| APT10050B2LC APT10050LLC 1000V 21A 0.500W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. * Identical Specifications: T-MAXTM or TO-264 Package * Lower Gate Charge & Capacitance * Easier To Drive * 100% Avalanche Tested * Faster switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter B2LC T-MAXTM TO-264 LLC D G S All Ratings: TC = 25C unless otherwise specified. APT10050 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 1000 21 84 30 40 520 4.16 300 21 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 21 0.500 25 250 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A 8-2000 050-5929 rev A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10050 B2LC - LLC Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = 0.5 ID[Cont.] @ 25C VGS = 15V MIN TYP MAX UNIT 5000 600 190 170 30 95 18 13 43 nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current Pulsed Source Current 1 Diode Forward Voltage Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/s) AL IC HN EC ON TI ED AT NC RM VA FO AD IN VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C ns 8.5 MIN TYP MAX UNIT Amps Volts ns C (Body Diode) 21 84 1.3 (Body Diode) 2 (VGS = 0V, IS = -ID[Cont.]) 960 Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/s) 22.0 THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.24 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 41.32mH, R = 25W, Peak I = 21A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 8-2000 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) Gate Drain Source rev A 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. 050-5929 These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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